View EM47FM0888MBA_5394861.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

EM47FM0888MBA jul. 2012 1/38 www.eorex.com 4gb (64m8bank 8) double data rate 3 low voltage sdram features ? jedec standard vdd/vddq = 1.35v(1.283-1.45v) ? all inputs and outputs are compatible with sstl_15 interface. ? fully differential clock inputs (ck, /ck) operation. ? eight banks ? posted cas by programmable additive latency ? bust length: 4 with burst chop (bc) and 8. ? cas write latency (cwl): 5, 6, 7, 8 ? cas latency (cl): 6, 7, 8, 9, 10, 11 ? write latency (wl) =read latency (rl) -1. ? bi-directional differential data strobe (dqs). ? data inputs on dqs centers when write. ? data outputs on dqs, /dqs edges when read. ? on chip dll align dq, dqs and /dqs transition with ck transition. ? dm mask write data-in at the both rising and falling edges of the data strobe. ? sequential & interleaved burst type available both for 8 & 4 with bc. ? multi purpose register (mpr) for pre-defined pattern read out ? on die termination (odt) options: synchronous odt, dynamic odt, and asynchronous odt ? auto refresh and self refresh ? 8,192 refresh cycles / 64ms ? refresh interval: 7.8us t case between 0 c ~ 85 c ? rohs compliance ? driver strength: rzq/7, rzq/6(rzq=240 ) ? high temperature self-refresh rate enable ? zq calibration for dq drive and odt ? reset pin for initialization and reset function description the EM47FM0888MBA is a high speed double date rate 3 (ddr3) low voltage synchronous dram fabricated with ultra high performance cmos process containing 4,294,967,296 bits which organized as 64mbits x 8 banks by 8 bits. this synchronous device achieves high speed double-data-rate transfer rates of up to 1600 mb/sec/pin (ddr3-1600) for general applications. the chip is designed to comply with the following key ddr3 sdram features: (1) posted cas with additive latency, (2) write latency = read latency -1, (3) on die termination, (4) programmable driver strength data,(5) seamless bl4 access with bank-grouping. all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. inputs are latched at the cross point of differential clocks (ck rising and /ck falling). all i/os are synchronized with a pair of bidirectional differential data strobes (dqs and /dqs) in a source synchronous fashion. the address bus is used to convey row, column and bank address information in a /ras and /cas multiplexing style. the 4gb ddr3 devices operates with a single power supply: 1.35v(1.283-1.45v) vdd and vddq. available package: fbga-78ball (with 0.8mm x 0.8mm ball pitch)
EM47FM0888MBA jul. 2012 2/38 www.eorex.com ordering information part no organization max. freq package grade pb EM47FM0888MBA-150 512m x 8 ddr3-1333h (9-9-9) fbga-78b commercial free EM47FM0888MBA-125 512m x 8 ddr3-1600k (11-11-11) fbga-78b commercial free EM47FM0888MBA-150e 512m x 8 ddr3-1 333h (9-9-9) fbga-78b extended free EM47FM0888MBA-125e 512m x 8 ddr3-1600k (11-11-11) fbga-78b extended free note: speed ( t ck *) is in order of cl-t rcd -t rp parts naming rule
EM47FM0888MBA jul. 2012 3/38 www.eorex.com pin assignment: top view 1 2 3 7 8 9 vss vdd nc a tdqs vss vdd vss vssq dq0 b tdqs vssq vddq vddq dq2 dqs c dq1 dq3 vssq vssq dq6 dqs d vdd vss vssq vrefdq vddq dq4 e dq7 dq5 vddq nc vss ras f ck vss nc odt vdd cas g ck vdd cke nc cs we h a10/ap zq nc vss ba0 ba2 j a15 vrefca vss vdd a3 a0 k a12/ bc ba1 vdd vss a5 a2 l a1 a4 vss vdd a7 a9 m a11 a6 vdd vss reset a13 n a14 a8 vss 78 ball fbga
EM47FM0888MBA jul. 2012 4/38 www.eorex.com pin description (simplified) pin name function ck, ck (system clock) ck and ck are differential clock inputs. all address and control input signals are sampled on the crossing of the positive edge of ck and negative edge of ck . output (read) data is referenced to the crossings of ck and ck (both directions of crossing). f7,g7 cs (chip select) all commands are masked when cs is registered high. cs provides for external rank selection on systems with multiple ranks. cs is considered part of the command code. h2 g9 cke (clock enable) cke high activates and cke low deactivates internal clock signals and device input buffers and output drivers. taking cke low provides precharge power-down and self- refresh operation (all banks idle), or active power-down (row active in any bank). cke is asynchronous for self refresh exit. after vrefca has become stable during the power on and initialization sequence, it must be maintained during all operations (including self-refresh). cke must be maintained high throughout read and write accesses. input buffers, excluding ck, ck , odt and cke are disabled during power-down. input buffers, excluding cke, are disabled during self -refresh. k3,l7,l3,k2, l8,l2,m8,m2, n8,m3,h7,m7, k7,n3,n7,j7 a0~a9,a10/ap, a11,a12( bc ), a13,a14,a15 (address) provided the row address (ra0 ? ra15) for active commands and the column address (ca0-ca9) and auto precharge bit for read/write commands to select one location out of the memory array in the respective bank. a10 is sampled during a precharge command to determine whether the precharge applies to one bank (a10 low) or all banks (a10 high). the address inputs also provide the op-code during mode register set commands. a12 is sampled during read and write commands to determine if burst chop (on-the-fly) will be performed. (high: no burst chop, low: burst chopped). see command truth table for details. j2,k8,j3 ba0, ba1,ba2 (bank address) ba0 ? ba2 define to which bank an active, read, write or precharge command is being applied. bank address also determines if the mode register is to be accessed during a mrs cycle. g1 odt (on die termination) odt (registered high) enables termination resistance internal to the ddr3 sdram. when enabled, odt is applied to each dq, dqs, dqs , dm/tdqs, and tdqs signal. the odt pin will be ignored if the mode register mr1 is programmed to disable odt.
EM47FM0888MBA jul. 2012 5/38 www.eorex.com pin description (continued) (data strobe) c3,d3 dqs, dqs output with read data, input with write data. edge-aligned with read data, centered in write data. the data strobe dqs is paired with differential signal /dqs to provide differential pair signaling to the system during reads and writes. ddr3 sdram supp orts differential data strobe only and does not support single-ended. b7,a7 (termination data strobe) when enabled via mode register a11=1 in mr1 , dram will enable the same termination resistance function on tdqs/tdqs that is applied to dqs/dqs. when disabled via mode register a11=0 in mr1 , dm/tdqs will provide the data mask function and tdqs is not used. tdqs, tdqs ras , cas , we f3, g3, h3 (command inputs) ras , cas and we (along with cs ) define the command being entered. b3,c7,c2,c8,e3, dq0~7 (data input/output) data inputs and outputs are on the same pin. e8,d2,e7 a2,a9,d7,g2,g8, k1,k9,m1,m9/a1, (power supply/ground) vdd and vss are power supply for internal circuits. vdd/vss a8,b1,d8,f2,f8,j1 ,j9,l1,l9,n1,n9 b9,c1,e2,e9 vddq /vssq (dq power supply/dq ground) /b2,b8,c9,d1,d9 vddq and vssq are power supply for the output buffers. h8 zq (zq calibration) reference pin for zq calibration n2 reset (active low asynchronous reset) reset is active when reset is low, and inactive when reset is high. reset must be high during normal operation. reset is a cmos rail to rail signal with dc high and low at 80% and 20% of vdd, i.e. 1.20v for dc high and 0.30v for dc low. e1 vrefdq (reference voltage) reference voltage for dq j8 vrefca (reference voltage) reference voltage for ca a3,f1,h1,f9, (no connection) nc no internal electrical connection is present. h9 note: input pins only ba0-ba2, a0-a15, ras , cas , we , cs , cke, odt and reset do not supply termination.
EM47FM0888MBA jul. 2012 6/38 www.eorex.com absolute maximum rating symbol item rating units v in , v out input, output voltage -0.4 ~ +1.975 v v dd power supply voltage -0.4 ~ +1.975 v v ddq power supply voltage -0.4 ~ +1.975 v commercial 0 ~ +70 t op operating temperature range extended -25 ~ +85 c t stg storage temperature range -55 ~ +100 c note: caution exposing the device to stress above those listed in absolute maximum ratings could cause permanent damage. the device is not meant to be operated under conditions outside the limits described in the operati onal section of this specification. recommended dc operating conditions symbol parameter min. typ. max. units v dd power supply voltage 1.283 1.35 1.45 v v ddq power supply for i/o voltage 1.283 1.35 1.45 v single-ended ac and dc input levels for command and address parameter min. max. units symbol v ihca (dc100) dc input logic high vref+0.100 vdd v v ilca (dc100) dc input logic low vss vref-0.100 v v ihca (ac175) ac input logic high vref+0.175 - v v ilca (ac175) ac input logic low - vref-0.175 v v ihca (ac150) ac input logic high vref+0.150 - v v ilca (ac150) ac input logic low - vref-0.150 v v refca (dc) reference voltage for add, cmd 0.49*vdd 0.51*vdd v single-ended ac and dc input levels for dq and dm parameter min. max. units symbol v ihdq (dc100) dc input logic high vref+0.100 vdd v v ildq (dc100) dc input logic low vss vref-0.100 v v ihdq (ac175) ac input logic high - - v v ildq (ac175) ac input logic low - - v v ihdq (ac150) ac input logic high vref+0.150 - v v ildq (ac150) ac input logic low - vref-0.150 v v refdq (dc) reference voltage for dq, dm 0.49*vdd 0.51*vdd v note1. for input pins except /reset: vref= v refca (dc) or vref= v refdq (dc). note2. the ac peak noise on vref may not allow vref to deviate from v refca (dc) or vref= v refdq (dc) by more than 1% vdd (for reference: approx. 15mv. note3. for reference voltage = vdd/2 15mv.
EM47FM0888MBA jul. 2012 7/38 www.eorex.com pin capacitance symbol parameters pins min. max. unit notes cck input pin capacitance, ck, /ck 0.8 1.4 pf 1,3 cdck delta input pin capacitance, ck, /ck ck, /ck 0 0.15 pf 1,2 cin_ctrl input pin capacitance, control pins 0.75 1.3 pf 1 cdin_ctrl delta input pin capacitance, control pins /cs,cke,odt -0.4 0.2 pf 1,4 cin_add_cmd input pin capacitance, address and command pins 0.75 1.3 pf 1 cdin_add_cmd delta input pin capacitance, address and command pins /ras,/cas,/we, address -0.4 0.4 pf 1,5 cio input/output pins capa citance 1.5 2.5 pf 1,6 cdio delta input/output pins capacitance dq,dqs,/dqs tdqs,/tdqs, dm -0.5 0.3 pf 1,7,8 cddqs delta input/output pins capacitance dqs, /dqs 0 0.15 pf 1,10 czq input/output pin capacitance, zq zq - 3 pf 1,9 notes1. vdd, vddq, vss, vssq applied and all other pins (e xcept the pin under test ) floating. vdd = vddq =1.35v, vbias=vdd/2. notes2. absolute value of cck(ck-pin) - cck(/ck-pin). notes3 . cck (min.) will be equal to cin (min.) notes4. cdin_ctrl = cin_ctrl - 0.5*(cck(ck-pin) + cck(/ck-pin)) notes5 . cdin_add_cmd = cin_add_cmd - 0.5*(cck(ck-pin) + cck(/ck-pin)) notes6. although the dm, tdqs and /tdqs pins have different functions, the loading matches dq and dqs. notes7. dq should be in high impedance state. notes8. cdio = cio (dq, dm) - 0.5*(cio(dqs-pin) + cio(/dqs-pin)). notes9. maximum external load capacitance on zq pin is 5pf. notes10. absolute value of cio(dqs) - cio(/dqs).
EM47FM0888MBA jul. 2012 8/38 www.eorex.com ac and dc logic input levels for differential signals differential signals definition differential ac and dc input levels symbol parameter min. max. units note v ihdiff differential input high +0.2 see note3 v 1 v ildiff differential input low see note3 -0.2 v 1 v ihdiff (ac) ac differential input high 2x(vih(ac)-vref) see note3 v 2 v ildiff (ac) ac differential input low see note3 2x(vref-vil(ac)) v 2 note1. it is used to define a differential signal slew-rate. note2. f or ck - /ck use vih/vil(ac) of address/command and vr efca; for strobes (dqs, dqs) use vih/vil(ac) of dqs and vrefdq; if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also here. note3. these values are not defined, however they single-ended signals ck, /ck, dqs, /dqs need to be within the respective limits (vih(dc) ma x, vil(dc)min) for single-ended signals.
EM47FM0888MBA jul. 2012 9/38 www.eorex.com differential swing requirements for clock (ck - /ck) and strobe (dqs - /dqs) - allowed time before ringback (t dvac) for ck - /ck and dqs - /dqs slew rate [v/ns] tdvac [ps] @ |vih/ldiff(ac )| = 350mv tdvac [ps] @ |vih/ldiff(ac)| = 300mv - min max min max >4.0 75 - 175 - 4.0 57 - 170 - 3.0 50 - 167 - 2.0 38 - 163 - 1.8 34 - 162 - 1.6 29 - 161 - 1.4 22 - 159 - 1.2 13 - 155 - 1.0 0 - 150 - <1.0 0 - 150 - single-ended requirements for differential signals each individual component of a differential signal (ck, dqs, /ck, /dqs) has also to comply with certain requirements for single-ended signals. ck and /ck have to approximately reach vsehmin / v selmax (approximately equal to the ac-levels (vih(ac) / vil(ac) ) for address/co mmand signals) in every half-cycle. dqs, /dqs have to reach vsehmin / vselmax [approximately the ac-lev els (vih(ac) / vil(ac) ) for dq signals] in every half-cycle preceding and following a valid transition. note that the applicable ac-levels for address/command and dq?s might be diffe rent per speed-bin etc. e.g., if v ihca (ac150)/v ilca (ac150) is used for address/command signals, then these ac-levels apply also for the single-ended components of differential ck and /ck.
EM47FM0888MBA jul. 2012 10/38 www.eorex.com note that while address/command and dq signal requ irements are with respect to vref, the single-ended components of differential signals have a requirement wi th respect to vdd/2; this is nominally the same. the transition of single-ended signals through the ac-lev els is used to measure setup time. for singleended components of differential signals t he requirement to reach vsel max, vseh min has no beari ng on timing, but adds a restriction on the common mode ch aracteristics of these signals. single-ended levels for ck, dqs, /ck, /dqs symbol min. max. units note parameter single-ended high-level for strobes (vdd/2)+0.175 see note3 v 1,2 vseh (vdd/2)+0.175 see note3 v 1,2 single-ended high-level for ck, /ck single-ended low-level for strobes see note3 (vdd/2)-0.175 v 1,2 vsel single-ended low-level for ck, /ck see note3 (vdd/2)-0.175 v 1,2 note1. for ck, /ck use vih/vil(ac) of address/command; fo r strobes (dqs, dqs) use vih/vil(ac) of dqs. note2. vih(ac)/vil(ac) for dqs is ba sed on vrefdq; vih(ac)/vil(ac) for address/command is based on vrefca; if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also here. note3. these values are not defined, however the single -ended components of differential signals ck, /ck, dqs, /dqs need to be within the respective limits (v ih(dc) max, vil(dc) min) for single-ended signals as well as the limitations for overshoot and undershoot.
EM47FM0888MBA jul. 2012 11/38 www.eorex.com ac and dc output measurement levels parameter specification units note symbol dc output high measurement level (for iv curve linearity) 0.8*v ddq v v oh (dc) v om (dc) dc output middle measurement level (for iv curve linearity) 0.5*v ddq v dc output low measurement level (for iv curve linearity) 0.2*v ddq v v ol (dc) ac output high measurement level (for output slew rate) vtt+0.1*v ddq v 1 v oh (ac) ac output low measurement level (for output slew rate) vtt-0.1*v ddq v 1 v ol (ac) v ohdiff (dc) ac differential output high measurement level (for output slew rate) 0.2*v ddq v 2 v oldiff (dc) ac differential output low measurement level (for output slew rate) -0.2*v ddq v 2 notes1. the swing of 0.1 vddq is based on approximat ely 50% of the static single-ended output high or low swing with a driver impedance of 34 ? and an effective test load of 25 ? to vtt = vddq/2 at each of the differential outputs. notes2. the swing of 0.2 vddq is based on approximat ely 50% of the static single-ended output high or low swing with a driver impedance of 34 ? and an effective test load of 25 ? to vtt = vddq/2 at each of the differential outputs. dqs output crossing voltage - vox (ddr3-1600 or higher speed bin) dqs, /dqs differential slew rate symbol parameters 5v/ns 6v/ns 7v/ns 8v/ns 9v/ns 10v/ns 11v/ns 12v/ns unit v ox (ac) max. +100 +120 +140 +160 +180 +200 +200 +200 mv v ox (ac) min. deviation of dqs, /dqs output cross point voltage from 0.5*v ddq -100 -120 -140 -160 -180 -200 -200 -200 mv dqs output crossing voltage - vox (ddr3-1333 or lower speed bin) dqs, /dqs differential slew rate symbol parameters 5v/ns 6v/ns 7v/ns 8v/ns 9v/ns 10v/ns 11v/ns 12v/ns unit v ox (ac) max. +125 +150 +175 +200 +225 +225 +225 +225 mv v ox (ac) min. deviation of dqs, /dqs output cross point voltage from 0.5*v ddq -125 -150 -175 -200 -225 -225 -225 -225 mv notes1. measured using an effective test load of 25 to 0.5* v ddq at each of the differential outputs. notes2. for a differential slew rate in between the listed values, the v ox value may be obtained by linear interpolation. notes3. the dqs, /dqs pins under test are not required to be able to drive each of the slew rates listed in the table; the pins under test will provide one v ox value when tested with specified test condition. the dqs and /dqs differential slew rate when measuring v ox determines which v ox limits to use.
EM47FM0888MBA jul. 2012 12/38 www.eorex.com recommended dc operating conditions vdd/vddq = 1.35v(1.283-1.45v) -125 -150 symbol parameter & test conditions max units i dd1 operating one bank active-read-precharge current: cke: high; external clock: on; tck, nrc, nras, nrcd, cl: see timing used table; bl: 81; al: 0; /cs: high between act, rd and pre; command, address, data io: par tially toggling; dm:stable at 0; bank activity: cycling with one bank active at a time; output buffer and rtt: enabled in mode registers; odt signal: stable at 0 87 82 ma i dd2p1 precharge power-down current fast exit: cke: low; external clock: on; tck, cl: see timing used table; bl: 8; al: 0; /cs: stable at 1; command, address: stable at 0; data io: floating; dm: stable at 0; bank activity: all banks closed; output buffer and rtt: enabled in mode regi sters; odt signal: stable at 0; pre-charge power down mode: fast exit 37 32 ma i dd2n precharge standby current: cke: high; external clock: on; tck, cl: see timing used table; bl: 8; al: 0; /cs: stable at 1; command, address: partially toggling; data io: floating; dm:stable at 0; bank activity: all banks closed; output buffer and rtt: enabled in mode registers; odt signal: stable at 0 50 45 ma i dd3p active power-down current: cke: low; external clock: on; tck, cl: see timing used table; bl: 8; al: 0; /cs: stable at 1; command, address: stable at 0; data io: floating; dm: stable at 0; bank activity: all banks open; output buffer and rtt: enabled in mode regi sters; odt signal: stable at 0 63 58 ma i dd4w operating burst write current: cke: high; external clock: on; tck, cl: see timing used table; bl: 8; al: 0; /cs: high between wr; comma nd, address: partially toggling; data io: seamless write data burs t with different data between one burst and the next one; dm: stable at 0; bank activity: all banks open, wr commands cycling through banks: 0,0,1,1,2,2,...; output buffer and rtt: enabled in mode registers; odt signal: stable at high 165 145 ma i dd4r operating burst read current: cke: high; external clock: on; tck, cl: see timing used table; bl: 8; al: 0; /cs: high between rd; command, address: par-t ially toggling; data io: seamless read data burst with different data between one burst and the next one; dm: stable at 0; bank activity: all banks open, rd commands cycling through banks: 0,0,1,1,2,2,...; output buffer and rtt: enabled in mode registers; odt signal: stable at 0 187 164 ma i dd5b burst refresh current: cke: high; external clock: on; tck, cl, nrfc: see timing used table; bl: 8; al: 0; /cs: hi gh between ref; command, address: partially toggling; data io: floating; dm: stable at 0; bank activity: ref command every nrfc; output buffer and rtt: enabled in mode registers; odt signal: stable at 0 220 210 ma
EM47FM0888MBA jul. 2012 13/38 www.eorex.com -125 -150 parameter & test conditions max units symbol self refresh current: normal temperature range; tcase: 0- 85c; auto self-refresh (asr ): disabled; self-refresh temperature range (srt): normal; cke: low; external clock: off; ck and /ck: low; cl: see timing used table; bl: 8; al: 0; cs, command, address, data io: floating; dm: stable at 0; bank activity: self-refresh operation; output buffer and rtt: enabled in mode registers; odt signal: floating 22 22 ma i dd6 operating bank interleave read current; cke: high; external clock: on; tck, nrc, nras, nrcd, nrrd, nfaw, cl: see timing used table; bl: 8; al: cl-1; cs: high between act and rda; command, address: partially togglin g; data io: read data bursts with different data between one burst and the next one; dm: stable at 0; bank activity: two times interleaved cycling through banks (0, 1, ...7) with different addressing; output buffer and rtt: enabled in mode registers; odt signal: stable at 0 290 250 ma i dd7 note 1: burst length: bl8 fixed by mrs: set mr0 a[1,0]=00b note 2: output buffer enable: set mr1 a[12] = 0b; set mr 1 a[5,1] = 01b; rtt_nom e nable: set mr1 a[9,6,2] = 011b; rtt_wr enable: set mr2 a[10,9] = 10b note 3: precharge power down mode: set mr0 a12=0b for slow exit or mr0 a12=1b for fast exit note 4: auto self-refresh (asr): set mr2 a6 = 0b to disable or 1b to enable feature note 5: self-refresh temperature range (srt): set mr2 a7=0b for normal or 1b for extended temperature range note 6: refer to dram supplier data sheet and/or dimm spd to determine if optional f eatures or requirements are supported by ddr3 sdram note 7: read burst type : nibble sequential, set mr0 a[3]=0b
EM47FM0888MBA jul. 2012 14/38 www.eorex.com block diagram auto/ self refresh counter memory array s/ a & i/ o gating col. decoder col. add. buffer mode register set col add. counter burst counter dqm control data in data out dio a0 a1 a2 a3 a4 a5 a6 a7 a8 a9 a10 a11 a12 ba0 ba1 timing register clk cke /cs / ras / cas / we dm/tdqs dm /clk /tdqs dq[7:0] receiver write fifo driver dqs generator dll clk, /clk clk, /clk dqs,/dqs a13 ba2 /reset zq odt
EM47FM0888MBA jul. 2012 15/38 www.eorex.com ac operating test characteristics ddr3-1333 & ddr3-1600 speed bins vdd/vddq = 1.35v(1.283-1.45v) -125 (ddr3-1600) -150 (ddr3-1333) speed bin cl-nrcd-nrp 11-11-11 9-9-9 symbol parameter min. max. min. max. units notes t aa internal read command to first data 13.750 20 13.125 20 ns 8 t rcd active to read or write delay 13.750 - 13.125 - ns 8 t rp precharge command period 13.750 - 13.125 - ns 8 t rc active to active/auto refresh command 48.750 - 49.125 - ns 8 t ras active to precharge command period 35 9*t refi 36 9*t refi ns 7 t ck (avg) average clock cycle, cl=6, cwl=5 2.5 3.3 2.5 3.3 ns 1,2,3,5 .6 t ck (avg) average clock cycle, cl=7, cwl=6 1.875 <2.5 1.875 <2.5 ns 1,2,3,4 ,5,6 t ck (avg) average clock cycle, cl=8, cwl=6 1.875 <2.5 1.875 <2.5 ns 1,2,3,5 ,6 t ck (avg) average clock cycle, cl=9, cwl=7 1.5 <1.875 1.5 <1.875 ns 1,2,3,4 ,6 t ck (avg) average clock cycle, cl= 10, cwl=7 1.5 <1.875 1. 5 <1.875 ns 1,2,3,6 t ck (avg) average clock cycle, cl=11, cwl=8 1.25 <1.5 - - ns 1,2,3 - support cl settings 6,7, 8,9,10,11 6,7,8,9,10 nck - support cwl settings 5,6,7,8 5,6,7 nck notes1. the cl setting and cwl setting result in tck (avg ) (min.) and tck (avg) (max.) requirements. when making a selection of tck (avg), both need to be fu lfilled: requirements from cl setting as well as requirements from cwl setting. notes2. tck (avg) (min.) limits: sinc e /cas latency is not purely a nalog - data and strobe output are synchronized by the dll - all possible intermediate frequencies may not be guaranteed. an application should use the next smaller jedec standard tck (avg) value (2.5, 1.875, 1.5, or 1.25ns) when calculating cl (nck) = taa (ns) / tck (avg)( ns), rounding up to the next ?supported cl?. notes3. tck (avg) (max.) limits: calculate tck (avg) + t aa (max.)/cl selected and round the resulting tck (avg) down to the next valid speed bin (i.e. 3.3ns or 2.5n s or 1.875ns or 1.25ns). this result is tck (avg) (max.) corresponding to cl selected. notes4. ?reserved? settings are not allowed. user must program a different value. notes5. any ddr3-1333 speed bin also supports functional operation at lower frequencies as shown in the table ddr3-1333 speed bins which is not subj ect to production tests but verified by design/characterization. notes6. any ddr3-1600 speed bin also supports functional operation at lower frequencies as shown in the table ddr3-1600 speed bins which is not subj ect to production tests but verified by design/characterization. notes7. trefi depends on operating case temperature (tc). notes8. for devices supporting optional down binning to cl = 7 and cl = 9, taa/trcd/trp(min.) must be 13.125 ns or lower. spd settings must be programmed to match.
EM47FM0888MBA jul. 2012 16/38 www.eorex.com ac operating test characteristics vdd/vddq = 1.35v(1.283-1.45v) -125 (ddr3-1600) -150 (ddr3-1333) speed bin cl-nrcd-nrp 11-11-11 9-9-9 symbol parameter min. max. min. max. units notes t ck minimum clock cycle, dll-off mode 8 - 8 - ns 6 t ch , t cl (avg) average ck high/low level width 0.47 0.53 0.47 0.53 ns 6 - 6 - ns t rrd active bank a to active bank b command period 4 - 4 - nck t faw four activate window 30 - 30 - ns t ih (base) dc100 address and control input hold time (vih/vil(dc100) levels) 120 - 140 - ps 16 t is (base) ac175 address and control input setup time (vih/vil(ac175) levels) 45 - 65 - ps 16 t is (base) ac150 address and control input setup time (vih/vil(ac150) levels) 45+125 - 65+150 - ps 16,24 t dh (base) dq and dm input hold time (vih/vil(dc) levels) 45 - 65 - ps 17 t ds (base) dq and dm input setup time (vih/vil(ac) levels) 10 - 10 - ps 17 t ipw address and control input pulse width for each input 560 - 620 - ps 25 t dipw dq and dm input pulse width for each input 360 - 400 - ps 25 t hz (dq) dq high impedance time - 225 - 250 ps 13,14 t lz (dq) dq low impedance time -450 225 -500 250 ps 13,14 t hz (dqs) dqs,/dqs high impedance time rl+bl/2 reference - 225 - 250 ps 13,14 t lz (dqs) dqs,/dqs low impedance time rl-1 reference -450 225 -500 250 ps 13,14 t dqsq dqs,/dqs to dq skew per group, per access - 100 - 125 ps 12,13 t ccd /cas to /cas command delay 4 - 4 - nck t qh dq output hold time from dqs, /dqs 0.38 - 0.38 - t ck (avg) 12,13 t dqsck dqs,/dqs rising edge output access time from rising ck,/ck -225 225 -255 255 ps 12,13 t dqss dqs latch rising transitions to associated clock edges -0.27 0.27 -0.25 0.25 t ck (avg) t dqsh dqs input high pulse width 0.45 t ck (avg) 0.55 0.45 0.55 27,28
EM47FM0888MBA jul. 2012 17/38 www.eorex.com ac operating test characteristics vdd/vddq = 1.35v(1.283-1.45v) -150 (ddr3-1333) -187 (ddr3-1066) speed bin cl-nrcd-nrp 9-9-9 7-7-7 symbol parameter min. max. min. max. units notes t dsh dqs falling edge hold time from rising ck 0.18 - 0.2 - t ck (avg) 29 t dss dqs falling edge setup time to rising ck 0.18 - 0.2 - t ck (avg) 29 t dqsl dqs input low pulse width 0.45 0.55 0.45 0.55 t ck (avg) 26,28 t qsh dqs output high time 0.40 - 0.40 - t ck (avg) 12,13 t qsl dqs output low time 0.40 - 0.40 - t ck (avg) 12,13 t mrd mode register set command cycle 4 - 4 - nck 15 - 15 - ns t mod mode register set command update delay 12 - 12 - nck t rpre read preamble time 0.9 - 0.9 - t ck (avg) 13,19 t rpst read postamble time 0.3 - 0.3 - t ck (avg) 11,13 t wpre write preamble time 0.9 - 0.9 - t ck (avg) 1 t wpst write postamble time 0.3 - 0.3 - t ck (avg) 1 t wr write recovery time 15 - 15 - ns t dal (min) auto precharge write recovery + precharge time wr + roundup[t rp / t ck (avg) nck t mprr multi purpose register recovery time 1 - 1 - nck 22 7.5 - 7.5 - ns t wtr internal write to read command delay 4 - 4 - nck 18 7.5 - 7.5 - ns t rtp internal read to precharge command delay 4 - 4 - nck t ckesr minimum cke low width for self- refresh entry to exit t cke (min) +1 - t cke (min) +1 - nck 10 - 10 - ns t cksre valid clock requirement after self- refresh entry or power-down entry 5 - 5 - nck 10 - 10 - ns t cksrx valid clock requirement before self- refresh exit or power-down exit 5 - 5 - nck
EM47FM0888MBA jul. 2012 18/38 www.eorex.com ac operating test characteristics vdd/vddq = 1.35v(1.283-1.45v) -150 (ddr3-1333) -187 (ddr3-1066) speed bin cl-nrcd-nrp 9-9-9 7-7-7 symbol parameter min. max. min. max. units notes t rfc (min) + 10 - t rfc (min) + 10 - ns t xs exit self-refresh to commands not requiring a locked dll 5 - 5 - nck t xsdll exit self-refresh to commands requiring a locked dll t dll (min) - t dll (min) - nck t rfc auto-refresh to active/auto-refresh command 260 - 260 - ns t refi average periodic refresh interval 0 Qt c Q +85 - 7.8 - 7.8 s 5 - 5.625 - ns t cke cke minimum high and low pulse width 3 - 3 - nck t rfc (min) + 10 - t rfc (min) + 10 - ns t xpr exit reset from cke high to a valid command 5 - 5 - nck t dllk dll locking time 512 - 512 - nck t pd power-down entry to exit time t cke (min) 9*t refi t cke (min) 9*t refi 15 24 - 24 - ns t xpdll exit precharge power-down with dll frozen to commands requiring a locked dll 10 - 10 - nck 2 6 - 6 - ns t xp exit power-down with dll on to any valid command; exit precharge power-down with dll frozen to commands not requiring a locked dll 3 - 3 - nck t wrpden (min) timing of wr command to power- down entry (bl8otf, bl8mrs, bl4otf) wl + 4 + [t wr / t ck (avg)] nck t wrpden (min) timing of wr command to power- down entry (bc4mrs) wl + 2 + [t wr / t ck (avg)] nck 9 t wrapden timing of wra command to power- down entry (bl8otf, bl8mrs, bl4otf) wl + 4 + wr + 1 - wl + 4 + wr + 1 - nck 10 t wrapden timing of wra command to power- down entry (bc4mrs) wl + 2 + wr + 1 wl + 2 + wr + 1 - - nck 10 ac operating test characteristics
EM47FM0888MBA jul. 2012 19/38 www.eorex.com vdd/vddq = 1.35v(1.283-1.45v) -150 (ddr3-1333) -187 (ddr3-1066) speed bin cl-nrcd-nrp 9-9-9 7-7-7 symbol parameter min. max. min. max. units notes t refpden timing of ref command to power- down entry 1 - 1 - nck 20,2 1 t mrspden timing of mrs command to power- down entry t mod (min) - t mod (min) - t cpded command pass disable delay 1 - 1 - nck t actpden timing of act command to power- down entry 1 - 1 - nck 20 t prpden timing of pre command to power- down entry 1 - 1 - nck 20 t rdpden timing of rd/rda command to power-down entry rl + 4 +1 - rl + 4 +1 - nck t aon rtt turn-on -250 250 -300 300 ps 7 t aonpd asynchronous rtt turn-on delay (power-down with dll frozen) 2 8.5 2 8.5 ns t aof rtt_nom and rtt_wr turn-off time from odtloff reference 0.3 0.7 0.3 0.7 t ck (avg) 8 t aofpd asynchronous rtt turn-off delay (power-down with dll frozen) 2 8.5 2 8.5 ns odth4 odt high time without write command or with write command and bc4 4 - 4 - nck odth8 odt high time with write command and bl8 6 - 6 - nck t adc rtt dynamic change skew 0.3 0.7 0.3 0.7 t ck (avg) t zqinit power-up and reset calibration time 512 - 512 - nck t zqoper normal operation full calibration time 256 - 256 - nck t zqcs normal operation short calibration time 64 - 64 - nck 23 t wlmrd first dqs pulse rising edge after write leveling mode is programmed 40 - 40 - nck 3 t wldqsen dqs./dqs delay after write leveling mode is programmed 25 - 25 - nck 3 t rtw read to write command delay (bc4mrs, bc4otf) rl + t ccd /2 + 2nck-wl - rl + t ccd /2 + 2nck-wl - t rtw read to write command delay (bl8mrs, bl8otf) rl + t ccd /2 + 2nck-wl - rl + t ccd /2 + 2nck-wl - t rap active to read with auto precharge command delay t rcd min - t rcd min -
EM47FM0888MBA jul. 2012 20/38 www.eorex.com ac operating test characteristics vdd/vddq = 1.35v(1.283-1.45v) -150 (ddr3-1333) -187 (ddr3-1066) speed bin cl-nrcd-nrp 9-9-9 7-7-7 symbol parameter min. max. min. max. units notes t wls write leveling setup time from rising ck,/ck crossing to rising dqs,/dqs crossing 165 - 195 - ps t wlh write leveling hold time from rising dqs,/dqs crossing to rising ck,/ck crossing 165 - 195 - ps t wlo write leveling output delay 0 7.5 0 9 ns t wloe write leveling output error 0 2 0 2 ns t ck (abs) absolute clock period t ck (avg)min+ t jit (per)min t ck (avg)max+ t jit (per)max t ck (avg)min+ t jit (per)min t ck (avg)max+ t jit (per)max ps t ch (abs) absolute clock high pulse width 0.43 - 0.43 - t ck (avg) 30 t cl (abs) absolute clock low pulse width 0.43 - 0.43 - t ck (avg) 31 t jit (per) clock period jitter -70 70 -80 80 ps t jit (per,lck) clock period jitter during dll locking period -60 60 -70 70 ps t jit (cc) cycle to cycle period jitter - 140 - 160 ps t jit (cc,lck) cycle to cycle period jitter during dll locking period - 120 - 140 ps t err (2per) cumulative error across 2 cycles -103 103 -118 118 ps t err (3per) cumulative error across 3 cycles -122 122 -140 140 ps t err (4per) cumulative error across 4 cycles -136 136 -155 155 ps t err (5per) cumulative error across 5 cycles -147 147 -168 168 ps t err (6per) cumulative error across 6 cycles -155 155 -177 177 ps t err (7per) cumulative error across 7 cycles -163 163 -186 186 ps t err (8per) cumulative error across 8 cycles -169 169 -193 193 ps t err (9per) cumulative error across 9 cycles -175 175 -200 200 ps t err (10per) cumulative error across 10 cycles -180 180 -205 205 ps t err (11per) cumulative error across 11 cycles -184 184 -210 210 ps t err (12per) cumulative error across 12 cycles -188 188 -215 215 ps t err (nper) cumulative error across t err (nper)min=(1+0.68ln(n))*t jit (per)min ps 32 n= 13,14,? 49,50 cycles t err (nper)max=(1+0.68ln(n))*t jit (per)max
EM47FM0888MBA jul. 2012 21/38 www.eorex.com ac operating test characteristics vdd/vddq = 1.35v(1.283-1.45v) -125 (ddr3-1600) -150 (ddr3-1333) speed bin cl-nrcd-nrp 11-11-11 9-9-9 symbol parameter min. max. min. max. units notes t anpd odt to power-down entry/ exit latency wl?1 - wl?1 - nck odtl on odt turn on latency wl?2 wl?2 wl?2 wl?2 nck odtl off odt turn off latency wl?2 wl?2 wl?2 wl?2 nck odtl cnw odt latency for changing from rtt_nom to rtt_wr wl?2 wl?2 wl?2 wl?2 nck odtl cwn4 odt latency for changing from rtt_wr to rtt_nom (bc4) - 4+odtl off - 4+odtl off nck odtl cwn8 odt latency for changing from rtt_wr to rtt_nom (bl8) - 6+odtl off nck - 6+odtl off note 1: actual value dependant upon measurement level definitions which are tbd. note 2: commands requiring a locked dll are: read (and reada) and synchronous odt commands. note 3: the max values are system dependent. note 4: wr as programmed in mode register. note 5: value must be rounded-up to next higher integer value. note 6: there is no maximum cycle time limit besides t he need to satisfy the refresh interval, trefi. note 7: odt turn on time (min.) is when the device leaves high impedance and odt resistance begins to turn on. odt turn on time (max.) is when the odt resist ance is fully on. both are measured from odtlon. note 8: odt turn-off time (min.) is when the device starts to turn-off odt resistance. odt turn-off time (max.) is when the bus is in high impedance. both are measured from odtloff. note 9: twr is defined in ns, for calculation of twrpden it is necessary to round up twr / tck to the next integer. note 10: wr in clock cycles as programmed in mr0. note 11: the maximum read postamble is bound by tdqsck(min) plus tqsh(min) on the left side and thz(dqs)max on the right side. note 12: output timing deratings are relative to the sdram input clock. when the device is operated with input clock jitter, this parameter needs to be derated by tbd. note 13: value is only valid for ron34. note 14: single ended signal parameter. refer to the sectio n of tlz(dqs), tlz(dq), thz(dqs), thz(dq) notes for definition and measurement method. note 15: trefi depends on operating case temperature (tc). note 16: tis(base) and tih(base) values are for 1v/ns command/ addresss single-ended slew rate and 2v/ns ck, /ck differential slew rate, note for dq and dm si gnals, vref(dc) = vrefdq(dc). for input only pins except reset, vref(dc) = vrefca(dc). see addr ess / command setup, hold and derating section. note 17: tds(base) and tdh(base) values are for 1v/ns dq single-ended slew rate and 2v/ns dqs, /dqs differential slew rate. note for dq and dm signals, vref(dc)= vrefdq(dc). fo r input only pins except reset, vref(dc) = vrefca(dc). see data setup, hold and and slew rate derating section.
EM47FM0888MBA jul. 2012 22/38 www.eorex.com note 18: start of internal write transa ction is defined as follows ; for bl8 (fixed by mrs and on-the-fly, otf) : rising clock edge 4 clock cycles after wl. for bc4 (on-the-fly, otf) : rising clock edge 4 clock cycles after wl. for bc4 (fixed by mrs) : rising cl ock edge 2 clock cycles after wl. note 19: the maximum read preamble is bound by tlzdqs(m in) on the left side and tdqsck(max) on the right side. note 20: cke is allowed to be registered low while operat ions such as row activation, precharge, auto precharge or refresh are in progress, but power-down idd spec will not be applied until finishing those operation. note 21: although cke is allowed to be registered low after a refresh command on ce trefpden(min) is satisfied, there are cases where additional time such as txpdll(min) is also required. note 22: defined between end of mpr read burst and mrs which reloads mpr or disables mpr function. note 23: one zqcs command can effectively correct a mini mum of 0.5 % (zqcorrection) of ron and rtt impedance error within 64 nck for all speed bins assuming the maximum sensitivities specified in the ?output driver voltage and temperature sensitivity? and ?odt voltage and temperature sensitivity? tables. the appropriate interval between zqcs commands can be determined from these tables and other application specific parameters. one method for calculating the in terval between zqcs command s, given the temperature (tdriftrate) and voltage (vdriftrate) drift rates that the s dram is subject to in the application, is illustrated. the interval could be defined by the following formula: ate) x vdriftr (vsens )tdriftrate x (tsens on zqcorrecti + where tsens = max(drttdt, drondtm) and vsens = max(drttdv, drondvm) define the sdram temperature and volt age sensitivities. note 24: the tis(base) ac150 specifications are adjusted from the tis(base) specification by adding an additional 100 ps of derating to accommodate for the lo wer alternate threshold of 150 mv and another 25 ps to account for the earlier reference point [(175 mv - 150 mv) / 1 v/ns]. note 25: pulse width of a input signal is defined as the width between the first crossi ng of vref(dc) and the consecutive crossing of vref(dc). note 26: tdqsl describes the instantaneous differential input low pulse width on dqs - /dqs, as measured from one falling edge to the next consecutive rising edge. note 27: tdqsh describes the instantaneous differential input high pulse width on dqs - /dqs, as measured from one rising edge to the next consecutive falling edge. note 28: tdqsh,act + tdqsl,act = 1 tck,act ; with txyz,act being the actual measured value of the respective timing parameter in the application. note 29: tdsh,act + tdss,act = 1 tck,act ; with txyz,act being the actual measured value of the respective timing parameter in the application. note 30: tch(abs) is the absolute instantaneous clock high pulse width, as measured from one rising edge to the following falling edge. note 31: tcl(abs) is the absolute instantaneous clock low pul se width, as measured from one falling edge to the following rising edge. note 32: n = from 13 cycles to 50 cycles. this row defines 38 parameters.
EM47FM0888MBA jul. 2012 23/38 www.eorex.com simplified state diagram
EM47FM0888MBA jul. 2012 24/38 www.eorex.com 1. command truth table cke command symbol n-1 n /cs /ras /cas /we ba0~ ba2 a10 a12, a10~a0 device deselect des h h h x x x x x x,x no operation nop h h l h h h v v v,v read (fixed bl8/bc4) rd h h l h l h ba l v,ca read (bc4, otf) rds4 h h l h l h ba l l,ca read (bl8, otf) rds8 h h l h l h ba l h,ca read with auto pre- charge (fixed bl8/bc4) rda h h l h l h ba h v,ca read with auto pre- charge (bc4, otf) rdas4 h h l h l h ba h l,ca read with auto pre- charge (bl8, otf) rdas8 h h l h l h ba h h,ca write (fixed bl8/bc4) wr h h l h l l ba l v,ca write (bc4, otf) wrs4 h h l h l l ba l l,ca write (bl8,otf) wrs8 h h l h l l ba l h,ca write with auto pre- charge (fixed bl8/bc4) wra h h l h l l ba h v,ca write with auto pre- charge (bc4, otf) wras 4 h h l h l l ba h l,ca write with auto pre- charge (bl8, otf) wras 8 h h l h l l ba h h,ca bank activate act h h l l h h ba ra pre-charge single bank pre h h l l h l ba l v,v pre-charge all banks prea h h l l h l v h v,v mode register set mrs h h l l l l ba op code refresh ref h h l l l h v v v,v self refresh entry sre h l l l l h v v v,v h x x x x x x,x self refresh exit srx l h l h h h v v v,v h l h x x x x x x,x power down entry pde h l l h h h v v v,v l h h x x x x x x,x power down exit pdx l h l h h h v v v,v zq calibration long zqcl h h l h h l x h x,x zq calibration short zqcs h h l h h l x l x,x h = high level, l = low level, x = don't care, v = valid , ba=bank address, ca=column address, ra=row address
EM47FM0888MBA jul. 2012 25/38 www.eorex.com note1. all ddr3 sdram commands are defined by states of /cs, /ras, /cas, /we and cke at the rising edge of the clock. the msb of ba, ra and ca are device density and configuration dependant. note2. /reset is low enable command whic h will be used only for asynchron ous reset so must be maintained high during any function. note3. bank addresses (ba) determine which bank is to be operated upon. for (e)mrs ba selects an (extended) mode register. note4. ?v? means ?h or l (but a defined logic level)? and ?x ? means either ?defined or undefined (like floating) logic level?. note5. burst reads or writes cannot be terminated or inte rrupted and fixed/on-the-fly (otf) bl will be defined by mrs. note6. the power down mode does not perform any refresh operation. note7. the state of odt does not affect the states descri bed in this table. the odt function is not available during self refresh. note8. self refresh exit is asynchronous. note9. vref(both vrefdq and vrefca) must be maintain ed during self refresh operation. vrefdq supply may be turned off and vrefdq may ta ke any value between vss and vdd during self refresh operation, provided that vrefdq is valid a nd stable prior to cke going back high and that first write operation or first write leveling activity may not occur earlier than 512 nck after exit from self refresh. note10. the no operation command should be used in cases when the ddr3 sdram is in an idle or wait state. the purpose of the no operation comma nd (nop) is to prevent the ddr3 sdram from registerng any unwanted commands between operations. a no operation command will not terminate a pervious operation that is still executing, such as a burst read or write cycle. note11. the deselect command performs the same function as no operation command. note12. refer to the cke truth table for more detail with cke transition.
EM47FM0888MBA jul. 2012 26/38 www.eorex.com 2. cke truth table cke current state n command (n) /ras, /cas, /we, /cs action (n) notes n-1 l l x maintain power down 14,15 power down l h deselect or nop power down exit 11,14 l l x maintain self refresh 15,16 self refresh l h deselect or nop self refresh exit 8,12,16 bank active h l deselect or nop active power down entry 11,13,14 reading h l deselect or nop po wer down entry 11,13,14,17 writing h l deselect or nop po wer down entry 11,13,14,17 precharging h l deselect or nop power down entry 11,13,14,17 refreshing h l deselect or nop pr echarge power down entry 11 h l deselect or nop precharge power down entry 11,13,14,18 all banks idle h l refresh self refresh 9,13,18 for more details with all signals, see ?command truth table? 10 note1. cke (n) is the logic state of cke at clock edge n; cke (n-1) was the state of cke at the previous clock edge. note2. current state is defined as the state of the ddr3 sdram immediately prior to clock edge n. note3. command (n) is the command registered at clock edg e n, and action (n) is a result of command (n), odt is not included here. note4. all states and sequences not shown are illegal or rese rved unless explicitly described elsewhere in this document. note5. the state of odt does not affect the states descri bed in this table. the odt function is not available during self-refresh. note6. during any cke transition (registration of cke h- >l or cke l->h) the cke level must be maintained until 1nck prior to tckemin being satisfied (a t which time cke may transition again). note7. deselect and nop are defined in the ?command truth table?. note8. on self-refresh exit deselect or nop commands must be issu ed on every clock edge occurring during the txs period. read or odt commands may be issued only after txsdll is satisfied. note9. self-refresh mode can only be ente red from the all banks idle state. note10. must be a legal command as defined in the ?command truth table?. note11. valid commands for powe r-down entry and exit ar e nop and deselect only. note12. valid commands for se lf-refresh exit are nop and deselect only. note13. self-refresh can not be entered during read or write operations. note14. the power-down does not perform any refresh operations. note15. ?x? means ?don?t care? (including floating around vref) in self-refresh and power - down. it also applies to address pins. note16. vref (both vrefdq and vrefca) must be main tained during self-refresh operation. vrefdq supply may be turned off and vrefdq may take any value between vss and vdd during self refresh
EM47FM0888MBA jul. 2012 27/38 www.eorex.com operation, provided that vrefdq is valid and stable prio r to cke going back high and that first write operation or first write leveling activity may not occur earli er than 512 nck after exit from self refresh. note17. if all banks are closed at the conclusion of the read, write or precharge command, then precharge power-down is entered, otherwise active power-down is entered. note18. ?idle state? is defined as all banks are closed (trp , tdal, etc. satisfied), no data bursts are in progress, cke is high, and all timings from previous operations are satisfied (tmrd, tmod, trfc, tzqinit, tzqoper, tzqcs, etc.) as well as all self-refresh exit and power-d own exit parameters are satisfied (txs, txp, txpdll, etc).
EM47FM0888MBA jul. 2012 28/38 www.eorex.com initialization the following sequence is required for power-up and initialization and is shown in below figure: 1. apply power (/reset is recommended to be main tained below 0.2 x vdd; all other inputs may be undefined). /reset needs to be mainta ined for minimum 200 us with stabl e power. cke is pulled ?low? anytime before /reset being de -asserted (min. time 10 ns). the power voltage ramp time between 300 mv to vddmin must be no greater than 200 ms; and during t he ramp, vdd > vddq and (vdd - vddq) < 0.3 volts. ? vdd and vddq are driven from a single power converter output, and ? the voltage levels on all pins other than vdd, vddq, vss, vssq must be less than or equal to vddq and vdd on one side and must be larger than or equal to vssq and vss on the other side. in addition, vtt is limited to 0.95 v max once power ramp is finished, and ? vref tracks vddq/2. or ? apply vdd without any slope reversal bef ore or at the same time as vddq. ? apply vddq without any slope reversal before or at the same time as vtt & vref. ? the voltage levels on all pins other than vdd, vddq, vss, vssq must be less than or equal to vddq and vdd on one side and must be larger than or equal to vssq and vss on the other side. 2. after /reset is de-asserted, wait for another 500 us until cke becomes active. during this time, the dram will start internal state initialization; this will be done independently of external clocks. 3. clocks (ck, /ck) need to be started and stabilized for at least 10 ns or 5 t ck (which is larger) before cke goes active. since cke is a synchronous sig nal, the corresponding set up time to clock (t is ) must be met. also, a nop or deselect command must be registered (with t is set up time to clock) before cke goes active. once the cke is registered ?high? after reset, cke needs to be continuously registered ?high? until the initialization sequence is finished, including expiration of tdllk and tzqinit. 4. the ddr3 sdram keeps its on-die termination in high-impedance state as long as /reset is asserted. further, the sdram keeps its on-die termination in high impedance state after /reset de-assertion until cke is registered high. the odt input signal may be in undefined state until t is before cke is registered high. when cke is registered high, the odt input signal may be statically held at either low or high. if rtt_nom is to be enabled in mr1, the odt input signal must be statically held low. in all cases, the odt input signal remains static until the power up initializati on sequence is finished, including the expiration of tdllk and tzqinit. 5. after cke is being registered high, wait minimum of reset cke exit time, t xpr , before issuing the first mrs command to load mode register. (t xpr =max (t xs ; 5 x t ck ) 6. issue mrs command to load mr2 with all application settings. (to issue mrs command for mr2 , provide ?low? to ba0 and ba2, ?high? to ba1.) 7. issue mrs command to load mr3 with all application settings. (to issue mrs command for mr3 , provide ?low? to ba2, ?high? to ba0 and ba1.) 8. issue mrs command to load mr1 with all application settings and dll enabled. (to issue "dll enable"
EM47FM0888MBA jul. 2012 29/38 www.eorex.com command, provide "low" to a0, "high" to ba0 and "low" to ba1 ? ba2). 9. issue mrs command to load mr0 with all application settings and ?dll reset?. (to issue dll reset command, provide "high" to a8 and "low" to ba0-2). 10. issue zqcl command to starting zq calibration. 11. wait for both tdllk and tzqinit completed. 12. the ddr3 sdram is now ready for normal operation. reset and power up initialization sequence
EM47FM0888MBA jul. 2012 30/38 www.eorex.com mode register definition mode register mr0 the mode register mr0 stores the data for controlling various ope rating modes of ddr3 sdram. it controls burst length, read burst type, cas latency, test mode, dll reset, wr and dll control for precharge power-down, which include various vendor specific options to make ddr3 sdram useful for various applications. the mode register is written by assert ing low on /cs, /ras, /cas, /we, ba0, ba1 and ba2, while controlling the states of address pins accordin g to the table below. 1 1 reserved 0 1 4 1 0 4 or 8 (otf) 0 0 8 a0 a1 bl 1 0 1 0 1 0 1 0 a4 0 1 1 11 0 1 1 10 0 0 1 9 0 0 1 8 0 1 0 7 0 1 0 6 0 0 0 reserved 0 0 0 reserved a2 a5 a6 cas latency 1 test 0 normal a7 mode 1 yes 0 no a8 dll reset 1 fast exit (dll on) 0 slow exit (dll off) a12 dll control (for precharge pd) 1 1 1 reserved 0 1 1 12 1 0 1 10 0 0 1 8 1 1 0 7 0 1 0 6 1 0 0 5 0 0 0 reserved a9 a10 a11 wr for autoprecharge 1 1 mr3 0 1 mr2 1 0 mr1 0 0 mr0 ba0 ba1 mrs mode 1 interleave 0 nibble sequential a3 read burst type bl cl rbt cas latency tm dll wr ppd 0 0 0 0 a0a1a2a3a4 a5a6 a7 a8 a9a10 a11a12 a13ba0 ba1 ba2 1 1 reserved 0 1 4 1 0 4 or 8 (otf) 0 0 8 a0 a1 bl 1 0 1 0 1 0 1 0 a4 0 1 1 11 0 1 1 10 0 0 1 9 0 0 1 8 0 1 0 7 0 1 0 6 0 0 0 reserved 0 0 0 reserved a2 a5 a6 cas latency 1 test 0 normal a7 mode 1 yes 0 no a8 dll reset 1 fast exit (dll on) 0 slow exit (dll off) a12 dll control (for precharge pd) 1 1 1 reserved 0 1 1 12 1 0 1 10 0 0 1 8 1 1 0 7 0 1 0 6 1 0 0 5 0 0 0 reserved a9 a10 a11 wr for autoprecharge 1 1 mr3 0 1 mr2 1 0 mr1 0 0 mr0 ba0 ba1 mrs mode 1 interleave 0 nibble sequential a3 read burst type bl cl rbt cas latency tm dll wr ppd 0 0 0 0 a0a1a2a3a4 a5a6 a7 a8 a9a10 a11a12 a13ba0 ba1 ba2 note1. ba2 and a13 are reserved for future use and must be programmed to 0 during mrs. note2. wr (write recovery for autoprecharge) min in clock cycles is calculated by dividing t wr (in ns) by t ck (in ns) and rounding up to the next in teger: wrmin[cycles] = roundup(t wr [ns]/t c k[ns]). the wr value in the mode register must be programmed to be equal or larger than wrmin. the programmed wr value is used with t rp to determine t dal .
EM47FM0888MBA jul. 2012 31/38 www.eorex.com burst type (a3) burst length r/w a2 a1 a0 sequential addressing, a3=0 interleave addressing, a3=1 r 0 0 0 0 1 2 3 t t t t 0 1 2 3 t t t t r 0 0 1 1 2 3 0 t t t t 1 0 3 2 t t t t r 0 1 0 2 3 0 1 t t t t 2 3 0 1 t t t t r 0 1 1 3 0 1 2 t t t t 3 2 1 0 t t t t r 1 0 0 4 5 6 7 t t t t 4 5 6 7 t t t t r 1 0 1 5 6 7 4 t t t t 5 4 7 6 t t t t r 1 1 0 6 7 4 5 t t t t 6 7 4 5 t t t t r 1 1 1 7 4 5 6 t t t t 7 6 5 4 t t t t w 0 v v 0 1 2 3 x x x x 0 1 2 3 x x x x 4 (chop) w 1 v v 4 5 6 7 x x x x 4 5 6 7 x x x x r 0 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 r 0 0 1 1 2 3 0 5 6 7 4 1 0 3 2 5 4 7 6 r 0 1 0 2 3 0 1 6 7 4 5 2 3 0 1 6 7 4 5 r 0 1 1 3 0 1 2 7 4 5 6 3 2 1 0 7 6 5 4 r 1 0 0 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3 r 1 0 1 5 6 7 4 1 2 3 0 5 4 7 6 1 0 3 2 r 1 1 0 6 7 4 5 2 3 0 1 6 7 4 5 2 3 0 1 r 1 1 1 7 4 5 6 3 0 1 2 7 6 5 4 3 2 1 0 8 w v v v 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 note1. in case of burst length being fixed to 4 by mr0 setting, the internal write operation starts two clock cycles earlier than for the bl8 mode. this means that the starting point for twr and twtr will be pulled in by two clocks. in case of burst length being sele cted on-the-fly via a12 (/bc), the internal write operation starts at the same point in time like a bu rst of 8 write operation. this means that during on-the-fly control, the starting point for twr and twtr will not be pulled in by two clocks. note2. 0...7 bit number is value of ca[2:0] that caus es this bit to be the first read during a burst. note3. t: output driver for data and strobes are in high impedance. note4. v: a valid logic level (0 or 1), but respective buffer input ignores level on input pins. note5. x: don?t care.
EM47FM0888MBA jul. 2012 32/38 www.eorex.com cas latency the cas latency is defined by mr0 (bits a9-a11). cas latency is the delay, in clock cycles, between the internal read command and the availability of the firs t bit of output data. ddr3 sdram does not support any half-clock latencies. the overall read latency (rl) is defined as additive latency (al) + cas latency (cl); rl = al + cl. test mode the normal operating mode is selected by mr0 (bit a7 = 0) and rest bits set to the desired values. programming bit a7 to a ?1? places the ddr3 sdram in to a test mode that is only used by the dram factory and should not be used. no operations or functionality is specified if a7 = 1. dll reset the dll reset bit is self-clearing, meaning that it retu rns back to the value of ?0? after the dll reset function has been issued. once the dll is enabled, a subsequent dll reset should be applied. any time that the dll reset function is used, tdllk must be met before any f unctions that require the dll can be used (i.e., read commands or odt synchronous operations). write recovery the programmed wr value mr0 (bits a9, a10, and a11) is used for t he auto precharge feature along with trp to determine tdal. wr (write recovery for auto-precharge) min in clock cycles is calculated by dividing twr (in ns) by tck (in ns) and rounding up to the next integer : wrmin[cycles] = roundup(twr[ns]/ tck[ns]). the wr must be programmed to be equal to or larger than twr(min). precharge pd dll mr0 (bit a12) is used to select the dll usage during precharge power-down mode. when mr0 (a12 = 0), or ?slow-exit?, the dll is frozen after entering precharge power-down (for poten tial power savings) and upon exit requires txpdll to be met prior to the next valid command. when mr0 (a12 = 1), or ?fast-exit?, the dll is maintained after entering precharge power-down and upon exiting power-down requires txp to be met prior to the next valid command.
EM47FM0888MBA jul. 2012 33/38 www.eorex.com mode register mr1 the mode register mr1 stores the data for enabling or disabling the dll, output driver strength, rtt_nom impedance, additive latency, write leveling enable, tdqs enable and qoff. th e mode register 1 is written by asserting low on /cs, /ras, /cas, /we, high on ba0, low on ba1 and ba2, while controlling the states of address pins according to the table below. dll d.i.c rtt al d.i.c rtt level 0 rtt 0 tdqs qoff 0 0 1 0 a0a1a2 a3a4 a5 a6a7 a8 a9 a10 a11 a12 a13 ba0 ba1 ba2 1 disable 0 enable a0 dll enable 1 1 reserved 0 1 reserved 1 0 rzq/7 0 0 rzq/6 a1 a5 output driver impedance control 1 1 1 reserved 0 1 1 reserved 1 0 1 rzq/8 0 0 1 rzq/12 1 1 0 rzq/6 0 1 0 rzq/2 1 0 0 rzq/4 0 0 0 odt disabled a2 a6 a9 rtt_nom 1 enabled 0 disabled a11 tdqs enable 1 output buffer disabled 0 output buffer enabled a12 qoff 1 1 reserved 0 1 cl - 2 1 0 cl - 1 0 0 0 a3 a4 additive latency 1 enabled 0 disabled a8 write leve ling enable 1 1 mr3 0 1 mr2 1 0 mr1 0 0 mr0 ba0 ba1 mrs mode dll d.i.c rtt al d.i.c rtt level 0 rtt 0 tdqs qoff 0 0 1 0 a0a1a2 a3a4 a5 a6a7 a8 a9 a10 a11 a12 a13 ba0 ba1 ba2 1 disable 0 enable a0 dll enable 1 1 reserved 0 1 reserved 1 0 rzq/7 0 0 rzq/6 a1 a5 output driver impedance control 1 1 1 reserved 0 1 1 reserved 1 0 1 rzq/8 0 0 1 rzq/12 1 1 0 rzq/6 0 1 0 rzq/2 1 0 0 rzq/4 0 0 0 odt disabled a2 a6 a9 rtt_nom 1 enabled 0 disabled a11 tdqs enable 1 output buffer disabled 0 output buffer enabled a12 qoff 1 1 reserved 0 1 cl - 2 1 0 cl - 1 0 0 0 a3 a4 additive latency 1 enabled 0 disabled a8 write leve ling enable 1 1 mr3 0 1 mr2 1 0 mr1 0 0 mr0 ba0 ba1 mrs mode note1. ba2, a8, a10 and a13 are reserved for future use (rfu) and must be programmed to 0 during mrs. note2. qoff: outputs disabled - dqs, dqss, /dqss. note3. in write leveling mode ( mr1 [bit7] = 1) with mr1 [bit12] = 1, all rtt_nom settings are allowed; in write leveling mode ( mr1 [bit7] = 1) with mr1 [bit12] = 0, only rtt_nom settings of rzq/2, rzq/4 and rzq/6 are allowed. note4. new ron value is defined as ron48=rzq/5.
EM47FM0888MBA jul. 2012 34/38 www.eorex.com dll enable the dll must be enabled for normal operation. dll enable is required during power up initialization, and upon returning to normal operation after having the dll disabled. during normal operation (dll-on) with mr1 (a0 = 0), the dll is automatically disabled when entering self-refresh operation and is automatically re-enabled upon exit of self-refresh operation. any time the dll is enabled and subsequently reset, tdllk clock cycles must occur before a read or synchronous odt command can be issued to allow ti me for the internal clock to be synchronized with the external clock. failing to wait for synchronization to occur may result in a violation of the tdqsck, taon or taof parameters . during tdllk, cke must continuousl y be registered high. ddr3 sdram does not require dll for any write operation, except when rtt_wr is enabled and the dll is required for proper odt operation. for more detailed information on dll disable operation refers to ?dll-off mode?. the direct odt feature is not supported during dll- off mode. the on-die termin ation resistors must be disabled by continuously registering the odt pin low and/or by programming the rtt_nom bits mr1 {a9,a6,a2} to {0,0,0} via a mode register set command during dll- off mode. the dynamic odt feature is not supported at dll-off mode. user must use mrs command to set rtt_wr, mr2 {a10, a9} = {0,0}, to disable dynamic odt externally. odt rtt values ddr3 sdram is capable of providing two different te rmination values (rtt_nom and rtt_wr). the nominal termination value rtt_nom is programmed in mr1 . a separate value (rtt_wr) may be programmed in mr2 to enable a unique rtt value when odt is enabled during writes. the rtt_wr value can be applied during writes even when rtt_nom is disabled. additive latency additive latency (al) operation is supported to make command and data bus efficient for sustainable bandwidths in ddr3 sdram. in this operation, it allows a read or write command (either with or without auto-precharge) to be issued immediately after the acti ve command. the command is held for the time of the additive latency (al) before it is issued inside the de vice. the read latency (rl) is controlled by the sum of the al and cas latency (cl) register settings. write laten cy (wl) is controlled by the sum of the al and cas write latency (cwl) register settings.
EM47FM0888MBA jul. 2012 35/38 www.eorex.com write leveling for better signal integrity, ddr3 memory module adopt ed fly-by topology for the commands, addresses, control signals, and clocks. the fly-by topology has the benefit of reducing the number of stubs and their length, but it also causes flight time skew betw een clock and strobe at every dram on t he dimm. this makes it difficult for the controller to maintain tdqss, tdss, and tdsh specification. theref ore, the ddr3 sdram supports a ?write leveling? feature to allow t he controller to compensate for skew. output disable the outputs may be enabled/disabled by mr1 (bit a12). when this feature is enabled (a12 = 1), all output pins (dqs, dqs, /dqs, etc.) are disconnected from the device , thus removing any loading of the output drivers. for normal operation, a12 should be set to ?0?. tqs, /tdqs tdqs (termination data strobe) provides additional termi nation resistance outputs that may be useful in some system configurations. when enabled via the mode register, the same termination resistance function is applied to the tdqs & /tdqs pins that is applied to the dqs & /dqs pins. in contrast to the rdqs function of ddr2 sdram, tdqs provides the termination resistance f unction only. the data strobe function of rdqs is not provided by tdqs. the tdqs and dm functions share t he same pin. when the tdqs function is enabled via the mode register, the dm function is not supported. wh en the tdqs function is disabled, the dm function is provided and the /tdqs pin is not used.
EM47FM0888MBA jul. 2012 36/38 www.eorex.com mode register mr2 the mode register mr2 stores the data for controlling refresh rela ted features, including rtt_wr impedance and cas write latency (cwl). the mode register 2 is wr itten by asserting low on /cs, /ras, /cas, /we, high on ba1, low on ba0 and ba2, while controlling the states of address pins according to the table below. 0 cwl 0 srt 0 rtt_wr 000010 a0 a1 a2 a3 a4a5 a6 a7 a8a9 a10a11 a12a13ba0 ba1 ba2 1 1 1 reserved 0 1 1 reserved 1 0 1 reserved 0 0 1 reserved 1 1 0 8 (1.5ns t ck R 1 .25ns) 0 1 0 7 (1.875ns t ck R 1 .5ns) 1 0 0 6 (2.5ns t ck R 1 .875ns) 0 0 0 5( t ck R 2.5 ns) a3 a4 a6 cas write latency (cwl) 1 extended temp. self refresh 0 normal operating temp. range a7 self refresh temp. range 1 1 reserved 0 1 rzq/2 1 0 rzq/4 0 0 dynamic odt off a9 a10 rtt_wr 1 1 mr3 0 1 mr2 1 0 mr1 0 0 mr0 ba0 ba1 mrs mode 0 cwl 0 srt 0 rtt_wr 000010 a0 a1 a2 a3 a4a5 a6 a7 a8a9 a10a11 a12a13ba0 ba1 ba2 1 1 1 reserved 0 1 1 reserved 1 0 1 reserved 0 0 1 reserved 1 1 0 8 (1.5ns t ck R 1 .25ns) 0 1 0 7 (1.875ns t ck R 1 .5ns) 1 0 0 6 (2.5ns t ck R 1 .875ns) 0 0 0 5( t ck R 2.5 ns) a3 a4 a6 cas write latency (cwl) 1 extended temp. self refresh 0 normal operating temp. range a7 self refresh temp. range 1 1 reserved 0 1 rzq/2 1 0 rzq/4 0 0 dynamic odt off a9 a10 rtt_wr 1 1 mr3 0 1 mr2 1 0 mr1 0 0 mr0 ba0 ba1 mrs mode note1. ba2, a8, a11 ~ a13 are rfu and must be programmed to 0 during mrs. note2. the rtt_wr value can be applied during writes even when rtt_nom is disabled. during write leveling, dynamic odt is not available. cas write latency (cwl) the cas write latency is defined by mr2 (bits a3-a5). cas write latency is the delay, in clock cycles, between the internal write command and the availability of the first bit of input data. ddr3 sdram does not support any half-clock latencies. the overall write lat ency (wl) is defined as additive latency (al) + cas write latency (cwl); wl = al + cwl. dynamic odt (rtt_wr) ddr3 sdram introduces a new feature ?dynamic odt?. in certain application cases and to further enhance signal integrity on the data bus, it is desirable that the termination strength of the ddr3 sdram can be changed without issuing an mrs command. mr2 register locations a9 and a10 configure the dynamic odt settings. in write leveling mode, only rtt_nom is available.
EM47FM0888MBA jul. 2012 37/38 www.eorex.com mode register mr3 the mode register mr3 controls multi purpose registers (mpr). t he mode register 3 is written by asserting low on cs, ras, cas, we, high on ba1 and ba0, and low on ba2 while controlling the states of address pins according to the table below. mpr location mpr 00000000000110 a0a1a2a3a4a5a6a7a8a9a10a11a12a13ba0 ba1 ba2 1 1 mr3 0 1 mr2 1 0 mr1 0 0 mr0 ba0 ba1 mrs mode 1 1 reserved 0 1 reserved 1 0 reserved 0 0 predefined pattern a0 a1 mpr location 1 dataflow from mpr 0 normal operation a2 mpr operation mpr location mpr 00000000000110 a0a1a2a3a4a5a6a7a8a9a10a11a12a13ba0 ba1 ba2 1 1 mr3 0 1 mr2 1 0 mr1 0 0 mr0 ba0 ba1 mrs mode 1 1 reserved 0 1 reserved 1 0 reserved 0 0 predefined pattern a0 a1 mpr location 1 dataflow from mpr 0 normal operation a2 mpr operation note1. ba2, a3 - a13 are reserved for future use (rfu) and must be programmed to 0 during mrs. note2. the predefined pattern will be used for read synchronization. note3. when mpr control is set for normal operation, mr3 a[2] = 0, mr3 a[1:0] will be ignored multi purpose register (mpr) the multi purpose register (mpr) function is used to read out a predefined system timing calibration bit sequence. to enable the mpr, a mode register set (mrs) command must be issued to mr3 register with bit a2 = 1. prior to issuing the mrs command, all ban ks must be in the idle state (all banks precharged and trp met). once the mpr is enabled, any subsequent rd or rda commands will be redirected to the multi purpose register. when the mpr is enabled, only rd or rda commands are allowed until a subsequent mrs command is issued with the mpr disabled ( mr3 bit a2 = 0). power-down mode, self-refresh and any other non-rd/rda command is not allowed during mpr enable mode. the reset function is supported during mpr enable mode.
EM47FM0888MBA jul. 2012 38/38 www.eorex.com package description: 78ball-fbga solder ball: lead free (sn-ag-cu)

▲Up To Search▲

Price & Availability of EM47FM0888MBA

	To Download EM47FM0888MBA Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .